从简单的理论说来,半导体表面可用连续激光束或电子束辐照,以加热至所期温度。用激光束扫描过一个表面,就可以得到一个移动的温度分布,对由于注入离子而受损的半导体不经熔融而进行退火处理。这种做法可得到固相外延重长。其效果和用炉子加热到相同温度所得的重长相仿。 From a simple theory, the semiconductor surface can be irradiated with a continuous laser beam or electron beam to heat to the desired temperature. By scanning a surface with a laser beam, a moving temperature profile is obtained, annealing the semiconductor impaired by ion implantation without melting. This approach can be heavy solid phase epitaxy. The effect is the same as the length of the stove that is heated to the same temperature.