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本文介绍了一种使硅栅CMOS工艺制作的抗辐射产品最佳化的快速周转技术。该技术包括:(1)在制作过程中的不同阶段能被“取出” (Pulled)的控制硅片上制作MOS电容器;(2)根据辐照产生的电荷量确定“加固水平”。我们证明了在关键工艺步骤前后这种技术在监控辐照加固水平和测定许多工艺步骤对加固水平的累积影响方面的作用。业已证明,应用于铝栅和硅栅两种工艺的干式栅氧化最佳温度是1000℃。在铝栅工艺中,源内(In-Source)蒸发铝是比溅射铝淀积更好的工艺步骤。选择能使加固程度最优化的工艺步骤,可将硅栅CMOS工艺所作产品的加固水平提高一个数量级以上。最后,我们报导了铝栅与硅栅工艺中,界面态形成与不同电场的依赖关系
This article describes a fast turnaround technique that optimizes anti-radiation products made with the silicon gate CMOS process. The technique consists of: (1) making MOS capacitors “pulled” on the control silicon at different stages of the manufacturing process; and (2) determining the “level of reinforcement” based on the amount of charge generated by the irradiation. We demonstrate the role of this technique in monitoring the level of radiation reinforcement before and after critical process steps and in determining the cumulative effect of many process steps on reinforcement levels. It has been proven that the optimum temperature for dry gate oxidation applied to both the aluminum gate and the silicon gate is 1000 ° C. In the aluminum gate process, In-Source evaporated aluminum is a better process step than sputtered aluminum deposition. Choosing the process step that optimizes the degree of reinforcement can increase the level of reinforcement of the product made with the silicon gate CMOS process by more than an order of magnitude. Finally, we report the dependencies of interface states on different electric fields in aluminum and silicon gate processes