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利用MOCVD技术在c面蓝宝石衬底上采用AlN缓冲层制备了Mg掺杂Al0.5Ga0.5N薄膜。采用CL测试方法研究了Mg掺杂对Al0.5Ga0.5N薄膜光学特性的影响。测量表明,Mg掺杂导致在Al0.5Ga0.5N薄膜的发光谱中出现了3.9eV的发光带,其发光机理为束缚的施主-受主对(DAP)间的辐射复合跃迁。
The M-doped Al0.5Ga0.5N thin films were prepared by MOCVD on c-plane sapphire substrates with AlN buffer layer. The influence of Mg doping on the optical properties of Al0.5Ga0.5N thin films was investigated by using the CL test method. The results show that Mg doping results in a band of 3.9eV in the emission spectrum of the Al0.5Ga0.5N thin film. The luminescence mechanism is the radiative recombination transition between bond-donor-acceptor pairs (DAPs).