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以CdCl2.2.5H2O为镉源,以Se粉为硒源,在苄胺体系中,180℃溶剂热条件下制备了CdSe纳米晶薄膜。并用XRD、SEM、TEM、UV-vis等对产物进行了一系列的表征,结果表明在该条件下可以得到粒径在10~20nm、较为均匀的CdSe纳米晶薄膜。同时在标准的三电极体系下,测试了CdSe纳米晶薄膜电极的光电化学性能。在光强32mW/cm2的模拟太阳光的照射下,该电极的开路电压(Voc)为0.395V,光电流密度(Isc)为0.951mA/cm2,填充因子(FF)为0.51,该电池的光电转化效率η为0.6%。
With CdCl2.2.5H2O as the source of cadmium and Se powder as the selenium source, CdSe nanocrystalline films were prepared by solvothermal method at 180 ℃ in benzylamine system. The products were characterized by XRD, SEM, TEM and UV-vis. The results show that under these conditions, CdSe nanocrystalline films with particle size of 10 ~ 20nm can be obtained. Meanwhile, the photoelectrochemical properties of CdSe nanocrystalline thin film electrodes were tested under the standard three-electrode system. The open circuit voltage (Voc) of the electrode was 0.395V, the photocurrent density (Isc) was 0.951mA / cm2 and the fill factor (FF) was 0.51 under the irradiation of simulated sunlight with a light intensity of 32mW / cm2. The conversion efficiency η was 0.6%.