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为解释以往在GaAs/n型AlGaAs异质结中所观测到的负平行磁阻现象(NPMR),本文首次提出了一新物理模型。在平行界面的磁场中,二维电子的子能带色散关系沿平行界面的k_y波矢方向发生位移。这种横向位移抑制了粒子-粒子通道中扩散传播子的发散行为,导致了在平行磁场中由局域化效应诱导的负磁阻效应。本文的物理模型与B、Lin的实验数据符合良好,并且由拟合求得了正确的电子在界面势阱中的平均纵向限制长度〈z〉和位相损失时间z_(?)。
To explain the negative-parallel magnetoresistance (NPMR) observed in GaAs / n-type AlGaAs heterojunction in the past, a new physical model was proposed for the first time. In the parallel interface magnetic field, the two-dimensional electron’s sub-band dispersion relation shifts along the k_y wave-direction of the parallel interface. This lateral displacement suppresses the divergence behavior of the diffusion propagator in the particle-particle channel, resulting in the negative magnetoresistive effect induced by the localization effect in the parallel magnetic field. The physical model in this paper is in good agreement with the experimental data of B and Lin, and the average longitudinal confinement length and phase loss time z_ (?) Of the correct electron in the interface potential well are obtained by fitting.