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光电双基区晶体管在光电混合模式工作条件下具有光控“S”型负阻特性及其光控电流开关效应。测量了光照时IBE-VBE特性、Ith(光阈值)-RC特性等曲线。并利用电注入双基区晶体管的“S”型负阻产生机理解释了测得的结果。
The photoelectric bistatic transistor has a light-controlled “S” type negative resistance characteristic and its light-controlled current switching effect under the opto-electric hybrid operating mode. IBE-VBE characteristics, Ith (Light Threshold) -RC characteristics and the like were measured during light irradiation. The measured results were explained by the “S” negative resistance mechanism of the bistatic transistor.