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在半导体器件的制造工艺中,向硅衬底中掺以P型或N型杂质形成PN结的时候居多,但是,本文应用的是形成PN结最基本的方法——杂质热扩散法。通常,这种扩散工艺由淀积和推进扩散二个阶段组成。首先,在淀积工艺中,在硅表面形成浅的高浓度杂质扩散区域,紧接着在推进扩散工艺中使结向更深的硅衬底内部浸透,控制表面杂质浓度。可以说,这种杂质浓度的控制和结深的控制左右着器件的性能。进而,这种扩散的好坏受到淀积工艺相当大的影响。因此,本文在说明了淀积工艺中P型杂质硼源概况的同时,着重介绍一下最近Owens-Illinois公司研究的新硼扩散源“硼~(+TM)(以下TM略去)的特点。
In the manufacturing process of semiconductor devices, P-type or N-type impurities are doped in the silicon substrate to form PN junctions. However, the most basic method for forming a PN junction, impurity thermal diffusion, is applied here. Generally, this diffusion process consists of deposition and advancing diffusion. First, in the deposition process, a shallow diffusion region of high concentration of impurities is formed on the surface of the silicon, followed by saturating the inside of the deeper-bonded silicon substrate during the diffusion process to control the surface impurity concentration. It can be said that this impurity concentration control and junction depth control the performance of the device. Furthermore, the quality of this diffusion is greatly affected by the deposition process. Therefore, in this paper, while describing the general situation of boron source of P-type impurities in the deposition process, the characteristics of the boron-based (+ TM) recently discovered by Owens-Illinois Company are highlighted.