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提出了具有垂直沟道的平面硅多沟道场效应晶体管的理论和实验结果。包括:由于载流子的极限速度而使漏电流饱和的短沟道场效应理论;具有100和1141沟道的器件的电特性和结构的实验结果;器件的电特性同器件物理和结构的关系。估计了所研究的器件结构的频率和功率方面的极限值,采用精密的掩模底版和新的目前尚未采用的硅工艺,进一步改进未来的器件结构。
The theoretical and experimental results of a planar silicon multi-channel field effect transistor with vertical channel are proposed. Including: short-channel field-effect theory that saturates the leakage current due to the ultimate speed of carriers; experimental results on the electrical characteristics and structure of devices with 100 and 1141 channels; and the electrical characteristics of the device as a function of device physics and structure. The frequency and power limits of the device structure studied were estimated, and sophisticated mask masks and new, yet unused, silicon processes were used to further refine future device structures.