论文部分内容阅读
Silicon materials compensated by deep level impurities such as nickel and gold have negative temperature coefficient (NTC) characteristics. In this work, n-type silicon wafers are smeared by nickel chloride ethanol solution and gold chloric acid ethanol solution, and subsequently put in the opening environment to heat. The electrical resistance and B-value of the thermistors made by this silicon material are measured and analyzed. When the silicon surface concentration of gold atoms is 2 × 10-6 mol/cm2, the uniformity of the single-crystal silicon material is optimal. When the diffusion temperature is between 900 and 1000 ℃, a material with high B-value and low electrical resistivity is obtained. The B-T and R-T change laws calculated by the theory of semiconductor deep level energy are basically consistent with the experimental results.
In this work, n-type silicon wafers are smeared by nickel chloride ethanol solution and gold chloric acid ethanol solution, and successively put in the opening environment to heat. When the silicon surface concentration of gold atoms is 2 × 10 -6 mol / cm 2, the uniformity of the single-crystal silicon The BT and RT change laws calculated by the theory of semiconductor deep level energy are basically consistent with the experimental results.