质子轰击条形DH激光器,通常我们采用常规的液相外延方法来制造。一般在n-GaAs衬底材料上生长Ga_(1-x)Al_xAs-GaAs五层DH结构。n面衬底上的接触电极用AuGeNi合金化形成;p-GaAs顶层上则先扩散锌,蒸发Cr-Au。对质子束的掩蔽 Proton bombardment of the bar DH laser, usually we use the conventional liquid phase epitaxy method to manufacture. Five-layer DH structure of Ga_ (1-x) Al_xAs-GaAs is generally grown on n-GaAs substrate. Contact electrodes on the n-face substrate are formed by AuGeNi alloying; on the top of the p-GaAs, zinc is first diffused and Cr-Au is evaporated. Masking of the proton beam