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采用射频磁控溅射法,通过改变工艺参数在n型(100)Si片上制备了表面粗糙度小、以(100)面择优取向的AlN薄膜。研究了高温退火、N2结尾等工艺对AlN薄膜择优取向的影响。结果表明,增大工作气压有利于薄膜(100)面择优取向,但是随着工作气压升高薄膜沉积不均匀,通过退火可以减少这种缺陷;N2-Ar比低有利于(100)面择优生长,但是容易使薄膜含有Al成分,通过以N2结尾可以减少薄膜中的Al成分,并从分子平均自由程和能量角度探讨了其对AlN压电薄膜择优取向的影响。
By RF magnetron sputtering, AlN films with small surface roughness and preferential orientation of (100) planes were prepared on n-type (100) Si wafers by changing the process parameters. The effects of high temperature annealing, N2 tailing on the preferred orientation of AlN films were investigated. The results show that increasing the operating pressure favors the preferential orientation of the (100) surface, but this defect can be reduced by annealing with increasing deposition pressure. Low N2-Ar ratio favors (100) , But it is easy to make the thin film contain Al component. By ending with N2, the Al composition in the thin film can be reduced, and its influence on the preferred orientation of the AlN piezoelectric thin film is discussed from the molecular mean free path and energy angle.