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研究并对比了Ti/Al/Ni/Au和Ti/Al/Pt/Au多层金属膜与未掺杂的Al0 .2 2 Ga0 .78N/GaN(i AlGaN/GaN)异质结构之间的欧姆接触性质。在退火温度低于 70 0℃时 ,两种接触样品上都不能得到欧姆接触。随着退火温度的升高 ,85 0℃快速退火后 ,在Ti/Al/Ni/Au接触上获得了 1.2 6×10 - 6 Ω·cm2 的比接触电阻率 ,在Ti/Al/Pt/Au接触上获得了 1.97× 10 - 5Ω·cm2 的比接触电阻率。研究结果表明 ,金属与半导体接触界面和Al0 .2 2 Ga0 .78N异质结构界面载流子沟道之间适当的势垒的存在对高质量欧姆接触的形成起重要作用 ,势垒的宽度取决于退火温度以及退火的具体进程。对Ti/Al/Ni/Au和Ti/Al/Pt/Au欧姆接触比接触电阻率的差异进行了解释。
The Ohm between Ti / Al / Ni / Au and Ti / Al / Pt / Au multilayer metal films and undoped Al0.22Ga0.78N / GaN (iAlGaN / GaN) heterostructures was studied and compared. Nature of contact. When the annealing temperature is below 70 0 ℃, ohmic contact can not be obtained on both the contact samples. With the increase of annealing temperature, the specific contact resistivity of 1.2 6 × 10 -6 Ω · cm 2 was obtained on Ti / Al / Ni / Au after rapid annealing at 85 0 ℃. The Ti / Al / Pt / Au The specific contact resistivity of 1.97 × 10 -5 Ω · cm 2 was obtained on the contact. The results show that the proper barrier between the metal-semiconductor interface and the Al0.22Ga0.78N heterostructure interfacial carrier channel plays an important role in the formation of high-quality ohmic contacts. The width of the potential barrier depends on The annealing temperature and the specific process of annealing. The differences in the ohmic contact resistivities of Ti / Al / Ni / Au and Ti / Al / Pt / Au are explained.