【摘 要】
：
Raman D-band involves defectsin graphene,which has been a promising tool to quantify defects in graphene.Here we present thecharacteristics ofGraphene Raman D-band with differentdefect density,carrier
【机 构】
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Qian Xuesen Laboratory of Space Technology,China Academy of Space Technology,Beijing 100094,China
【出 处】
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The 6th International Conference on Nanoscience and Technolo
论文部分内容阅读
Raman D-band involves defectsin graphene,which has been a promising tool to quantify defects in graphene.Here we present thecharacteristics ofGraphene Raman D-band with differentdefect density,carrier density and excitation energy.In addition to the Raman D-band intensity increases with high defect density,wefind the Raman D-band depends on the carrier density.The Raman D-band frequency increases for hole doping and decreases for electron doping.
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