【摘 要】
：
In the present study,taking amorphous TaOx(a-TaOx)and HfOy(a-HfOy)as examples,we confirm that the self-diffusion of O is predominant in both a-TaOx and a-Hf
【机 构】
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DepartmentofMaterialsEngineering,TheUniversityofTokyo,Tokyo,Japan;SchoolofChemistryandChemicalEngine
【出 处】
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2016年理论与高性能计算化学国际会议(International Conference on Theoretical
论文部分内容阅读
In the present study,taking amorphous TaOx(a-TaOx)and HfOy(a-HfOy)as examples,we confirm that the self-diffusion of O is predominant in both a-TaOx and a-HfOy based resistance switches,and both metal and O ions diffusions enhance with decrease of O content.As compared,the activation energies of O/Ta diffusion in a-TaOx(0.31~0.59/0.33~0.77 eV)are obvious lower than that of O/Hf in a-HfOy(0.60~0.72/0.66~0.86 eV),and the diffusion coefficients of O/Ta in a-TaOx are 3~5 orders higher than that of O/Hf in a-HfOy under the same O content at room temperature.Interestingly,in the a-TaOx with high O vacancy content(i.e.,x = 1.5 and 1),the diffusion of Ta becomes comparable to that of O in a wide range of temperature(from 300K to 1673K).
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