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5. High Density Plasma Reactive Ion Etching of CoFeB Magnetic Thin Films Using a CH4/Ar Plasma

High Density Plasma Reactive Ion Etching of CoFeB Magnetic Thin Films Using a CH4/Ar Plasma

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：renyuh

【摘 要】

：

The continued growth in Information Technology industries has demanded the development of nonvolatile semiconductor memories (NVSM) for next generation.

【作 者】

：

Eun Ho Kim Tea Young Lee Hwa Won Lee Chee Won Chung 

【机 构】

：

Department of Chemical Engineering, Inha University 253 Yonghyun-Dong, Nam-Ku, Incheon 402-751, Repu

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

CoFeB magnetic thin films Magnetic tunnel junction Inductively coupled plasma re 

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The continued growth in Information Technology industries has demanded the development of nonvolatile semiconductor memories (NVSM) for next generation.

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