Background, Motivation and Objective Ca3NbGa3Si2O14 [CNGS] single crystal has attractive features such as higher electro-mechanical coupling factors, no phase transition up to melting point around 1300℃, comparable temperature coefficient of frequency (TCF), and smaller impedance as compared to quartz. Therefore, CNGS is one of promising piezoelectric materials for combustion sensor and small-size oscillator with low electrical consumption. Recently, however, prices of raw materials composed of rare elements are rising because of an increase of their demands for various applications and there is an attempt to reduce usages of such rare elements in various fields. Especially, Ga2O3 powder is extremely expensive among composing elements of CNGS. In the case of La3Ta0.5Ga5.5O14 [LTG] crystal, on the other hand, there were some reports about Al doping to Ga site in the LTG crystal and the Al doping improved some piezoelectric properties such as electrical resistivity and piezoelectric constant. So we have tried to grow Al-doped CNGS crystal by the Czochralski method resulting in successful growth of 1 inch Ca3Nb(Ga0.75Al0.25) 3Si2O14 [CNGAS] bulk crystal.