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基于CoFeB-MgO的磁性隧道结由于具有极高的TMR比值(室温604％[1])而被人们广泛研究.为了有效提高V1/2(TMR比值下降到最大值的一半时外界所施加的电压),双势垒磁性隧道结成为研究热点,因为双势垒可以简单地被认为是两个单势垒的串联,而串联可以分压.
基于各种复合自由层的双势垒CoFeB-MgO磁性隧道结的磁电输运性质的研究
【摘 要】
：
基于CoFeB-MgO的磁性隧道结由于具有极高的TMR比值(室温604％[1])而被人们广泛研究.为了有效提高V1/2(TMR比值下降到最大值的一半时外界所施加的电压),双势垒磁性隧道结成为研究热点,因为双势垒可以简单地被认为是两个单势垒的串联,而串联可以分压.
【机 构】
：
中国科学院物理研究所,北京凝聚态物理国家实验室,北京,100190;CRANN and School of Physics, Trinity College, Dublin 2, Ireland
【出 处】
：
中国物理学会2012年秋季学术会议
【发表日期】
：
2012年9期
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