Rapid thermal annealing for α-Si/metal/semiconductor waveguide for active control of surface plasmon

来源 :The 4th Advances in Optoelectronics and Micro/nano-optics (A | 被引量 : 0次 | 上传用户：mimistart

【摘要】

：

The influence of Au/Ni-based ohmic contact formed on the lowly doped (7.3×1017cm-3,Zn-doped) InGaAsP films to active control of surface palsmon po-laritons (SPPs) propagation under various rapid therm

【作者】

：

Hui Zhang Yicen Li Dao Hua Zhang Ting Mei

【机构】

：

Laboratory of Nanophotonic Functional Materials and Devices,Institute of Optoelectronic Material and

【出处】

：

The 4th Advances in Optoelectronics and Micro/nano-optics (A

【发表日期】

：

2014年5期

【关键词】

：

surface plasmon polaritons rapid thermal annealing multiple quantum wells device

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Rapid thermal annealing for α-Si/metal/semiconductor waveguide for active control of surface plasmon

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