【摘 要】
：
在水平管式炉中,采用化学气相传输(VPT)方法,在Si基底上生长氧化锌(ZnO)微米棒阵列,其中单根ZnO微米棒的直径约为2～5微米,具有典型的六方纤锌矿晶体结构特征。光致发光(PL
【出 处】
：
2013全国生物与医学纳米技术博士生学术论坛
论文部分内容阅读
在水平管式炉中,采用化学气相传输(VPT)方法,在Si基底上生长氧化锌(ZnO)微米棒阵列,其中单根ZnO微米棒的直径约为2～5微米,具有典型的六方纤锌矿晶体结构特征。光致发光(PL)光谱的测试表明,该微米棒阵列具有很强的位于～391nm附近的近带边(NBE)辐射和由缺陷引起的位于～530nm附近的可见光辐射。将该样品包覆氧化石墨烯(Graphene Oxide)后,PL谱的测试表明在相同激发功率下,被氧化石墨烯包覆的微米棒阵列的荧光峰强度明显低于包覆前,并且荧光峰的强度随包覆氧化石墨烯的多少而变化。利用扫描电子显微镜(SEM)、拉曼(Raman)光谱仪和荧光光谱仪对氧化锌微米棒阵列以及包覆氧化石墨烯后的微米棒阵列进行了测试分析和表征,并且对由氧化石墨烯引起的荧光淬灭机制进行了探讨。
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