【摘 要】
:
MOCVD作为CVD领域的一个新型技术分支最早出现于1960年代[1],以M-C化学键为中心的有机金属化合物源替代传统的卤化物源,其突出优点是既克服了卤化物法CVD的气相腐蚀问题,
【机 构】
:
中国科学技术大学化学与材料科学学院USTC固体化学与无机膜研究所,合肥230026
论文部分内容阅读
MOCVD作为CVD领域的一个新型技术分支最早出现于1960年代[1],以M-C化学键为中心的有机金属化合物源替代传统的卤化物源,其突出优点是既克服了卤化物法CVD的气相腐蚀问题,又能大大降低淀积温度,为CVD技术在半导体光电材料与器件方面打开了走向高质量、规模化发展的康庄大道,加之与各种新技术诸如等离子体、光辐照、电子束、粒子束等激活与辅助的引入和结合,演绎了MOCVD领域半个世纪的光辉发展史[2],取得了今天以GaN基LED高效、节能LED照明产业为代表的宏伟业绩,MOCVD科学与技术本身也日臻成熟。陆大成和段树坤二位教授编著的"金属有机金属化学气相外延及应用"一书[3](科学出版社,2009)对此作了全面系统的总结,反映了该技术领域的最近进展和水平。
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