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5. Etching characteristics of SiO2 layer using amorphous carbon mask in dual-frequency capacitively cou

Etching characteristics of SiO2 layer using amorphous carbon mask in dual-frequency capacitively cou

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：chenan110

【摘 要】

：

As critical dimension (CD) in the nano-scale semiconductor devices during the fabrication of Si integrated circuits continuously decrease,etch selectivity control during patterning of nano-scale struc

【作 者】

：

J. H. LEE B. S. Kwon N.-E. Lee 

【机 构】

：

School of Advanced Materials Science & Engineering and Center for Advanced Plasma Surface Technology

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

ArF photoresist plasma etching line edge roughness (LER) frequency 

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论文部分内容阅读

As critical dimension (CD) in the nano-scale semiconductor devices during the fabrication of Si integrated circuits continuously decrease,etch selectivity control during patterning of nano-scale structure become more important due to continuously decreasing resist thickness and increasing aspect-ratio of patterns.

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