Frequency and Reverse Time Effects on Pulsed DC BCl3 Plasma Etching of GaAs

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：oldbuck

【摘要】

：

Frequency and reverse time effects on asymmetric bipolar pulsed DC BCl3 etching of GaAs were investigated.Gas flow rate of BCl3 was fixed at 20 sccm and chamber pressure was at 75 mTorr.

【作者】

：

J. W. Lee K. H. Choi J. Y. Shin D. K. Park K. H. Noh

【机构】

：

Dept.of Nano Engineering/Center for Nano Manufacturing, Inje University, Gimhae, GN, 621-749, Korea(

【出处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

GaAs Plasma Etching Pulsed DC Frequency Reverse Time

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Frequency and reverse time effects on asymmetric bipolar pulsed DC BCl3 etching of GaAs were investigated.Gas flow rate of BCl3 was fixed at 20 sccm and chamber pressure was at 75 mTorr.

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Frequency and Reverse Time Effects on Pulsed DC BCl3 Plasma Etching of GaAs

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