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In this letter, a low-temperature microwave annealing (MWA) method is first reported for the formation of ohmic contact to AlGaN/GaN high electron mobility transistors (HEMTs).Compared with the traditional GaN devices annealed by rapid thermal annealing (RTA), MWA-HEMTs can achieve a low ohmic contact resistance with much smoother surface of ohmic contacts.The spike mechanism is observed in our ohmic contact annealed by microwave under a low-temperature condition.Besides, MWA-HEMTs have higher ION/IoFF ratio and lower gate leakage current than the fabricated RTA-HEMTs in this letter.