Silicon etching using large-diameter neutral beam source

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：w478435139

【摘要】

：

Plasma etching is widely used for fabricating semiconductor electronic devices and microelectromechanical systems (MEMS),but plasma etching is known to cause damages due to charge-up and UV irradiatio

【作者】

：

Tomohiro Kubota Seiji Samukawa

【机构】

：

Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;BEANS Project 3D BEANS Center, 4-

【出处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

Neutral beam damage-free etching silicon etching

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Silicon etching using large-diameter neutral beam source

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