Dielectric coatings in the structure of passivated emitter and rear cell (PERC) are usually designed and fabricated using expensive vacuum deposition processes such as plasma enhanced chemical vapour deposition (PECVD),sputter,and atomic layer deposition (ALD).The major disadvantages of those processes are high cost of equipment and materials,safety concern,and requirements of standalone exhaust treatment.In this work,liquid phase deposited (LPD) polymer dielectric films are studied for their suitability to passivate the rear surface of p-type c-Si solar cells in combination of ALD Al2O3.Using the structure proposed,a surface recombination velocity (SRV) of<20 cm/s has been achieved on p-type FZ silicon wafers with resistivity of 1.3 Ω.cm.Totally four groups of solar cells were evaluated in terms of electrical and optical performance.The four groups are full aluminium back surface field (Al-BSF),PERC using ALD Al2O3 capped with PECVD SiNx,PERC using ALD Al2O3 capped with LPD dielectric,and PERC using LPD dielectric only on the rear.Contact opening on the rear was done by laser ablation,and metallization was realized using standard screen printing and in-line industrial firing furnace.