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5. Radiation damage measurement of Si MCZ detector irradiated by 800MeV proton

Radiation damage measurement of Si MCZ detector irradiated by 800MeV proton

来源 :第13届中日双边先进能源系统和聚变裂变工程材料会议(CIS-13) | 被引量 : 0次 | 上传用户：zonsun168

【摘 要】

：

The displacement damage of n-type Si MCZ detector induced by 800MeV proton irradiation was simulated and detected with I_DLTs.The detector charge collection characteristics,leakage current and depleti

【作 者】

：

Shuhuan Liu Zheng Li Wei Chen Mebougna Drabo 

【机 构】

：

School of Nuclear Science and Technology,Xi'an Jiaotong University,Xi'an,Shaanxi,710049,China

【出 处】

：

第13届中日双边先进能源系统和聚变裂变工程材料会议(CIS-13)

【发表日期】

：

2016年3期

【关键词】

：

Si MCZ detector Proton radiation damage Radiation defects measurement 

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　　The displacement damage of n-type Si MCZ detector induced by 800MeV proton irradiation was simulated and detected with I_DLTs.The detector charge collection characteristics,leakage current and depletion voltage before and after 6.6×1014p/cm2 800MeV proton irradiation were measured and analyzed.

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