The invention of Ge semiconductor transistors starts the microelectronic revolution.A vast amount of research work on Ge has led to the formulation of many basic physical principles and theories which are currently still of importance.Although silicon today is the workforce for large scale integrated circuits,the interest has risen for the high mobility materials such as Ge and SiGe which will be applied to the divices at the 32nm technology node and beyond.The present paper describes the lattice mismatch of SiGe/Si structures and the advantage of GaAs/Ge.The experimental results related with Ge implantation and solid state epitaxy,the Si/SiGe/Si heterostructure on SOI substrates and the high k material Nd2 Hf2 O7 grown on Ge are reported.Finally,the low dimensional and nano Ge and Ge-based materials used for the spintronic devices,quantum dots,single electron transistors and quantum computing are discussed.