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5. GO Based Quaternary States Memory

GO Based Quaternary States Memory

来源 :International Conference on Molecular Electronic Materials a | 被引量 : 0次 | 上传用户：lgl5201314

【摘 要】

：

Increasing the number of state in each elemental cell is an effective method to increasing the data storage,and it paves a new way for the development of memory devices.

【作 者】

：

Lai-yuan Wang Ming-dong Yi Ling-hai Xie Wei Huang 

【机 构】

：

National Synergistic Innovation Center for Advanced Materials(SICAM),Key Laboratory for Organic Elec

【出 处】

：

International Conference on Molecular Electronic Materials a

【发表日期】

：

2015年5期

【关键词】

：

memory GO quaternary states oxygen-migration 

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Increasing the number of state in each elemental cell is an effective method to increasing the data storage,and it paves a new way for the development of memory devices.

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