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[期刊论文] 作者：Lihua ZHANG,
来源：中国稀土信息：英文版 年份：2011
By Lihua ZHANG,Mingsheng YANG,Xiaofang LIU China Rare Earth Information Center and Baotou Research Institute...
Mechanism of Bragg Diffraction-Assisted Light Extraction in GaN-based Light-Emitting Diodes Based on
[期刊论文] 作者：LIU Wen-De,GAN Zi-Zhao,
来源：理论物理通讯：英文版 年份：2009
By introducing the distribution of the light energy density in GaN-based light-emitting diode (LED),theLED...
Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN
[会议论文] 作者：Xinhua Wang,Sen Huang,Yingkui Zheng,Ke Wei,Xiaojuan Chen,Xinyu Liu,
来源：第13届全国MOCVD学术会议 年份：2014
The effects of GaN channel layer thickness on dc and RF performance of AlGaN/GaN HEMTs with a state-of-the-art...composite AlGaN/GaN (1/1 μm) buffer were systematically investigated.Although HEMTs with...
[期刊论文] 作者：Zhixin Qin,Xinqiang Wang,Jiejun Wu,Tongjun Yu,Xiangning Kang,Xingxing Fu,Wei Yang,Zhijian Yang,Zhizhao Gan,
来源：Chinese Science Bulletin 年份：2014
In order to solve the problems of GaN heteroepitaxy on sapphire substrate,some techniques were explored.Freestanding...GaN substrates have been made by hydride va...
[期刊论文] 作者：赵丹梅,赵德刚,江德生,刘宗顺,朱建军,陈平,刘炜,李翔,侍铭,,
来源：Journal of Semiconductors 年份：2015
A method for growing GaN epitaxial layer on Si(111) substrate is investigated....Due to the large lattice mismatch between GaN and Al N, GaN grown directly above...
[期刊论文] 作者：Shan Ding,Yue-Wen Li,Xiang-Qian Xiu,Xue-Mei Hua,Zi-Li Xie,Tao Tao,Peng Chen,Bin Liu,Rong Zhang,You-Dou Zheng,
来源：中国物理B（英文版） 年份：2020
The GaN thick films have been grown on porous GaN template and planar metal-organic chemical vapor deposition...(MOCVD)-GaN template by halide vapor phase epitaxy...
[期刊论文] 作者：Liu Zhe,Wang Xiao-Liang,Wang Jun-Xi,Hu Guo-Xin,Guo Lun-Chun,Li Jin-Min,
来源：中国物理（英文版） 年份：2007
AIN/GaN superlattice buffer is inserted between GaN epitaxial layer and Si substrate before epitaxial...growth of GaN layer....High-quality and crack-free GaN epita...
[会议论文] 作者：LiHua Dong,
来源：第三届国际葡萄膜炎研讨会 年份：2011
...
[期刊论文] 作者：纪攀峰,刘乃鑫,魏同波,刘喆,路红喜,王军喜,李晋闽,,
来源：半导体学报 年份：2011
With an n-AlGaN(4 nm)/GaN(4 nm) superlattice(SL) inserted between an n-GaN and an InGaN/GaN multiquantum...well active layer,the efficiency droop of GaN-based LED...
[会议论文] 作者：赵妙,刘新宇,袁婷婷,庞磊,
来源：第十五届全国化合物半导体材料、微波器件和光电器件学术会议 年份：2008
基于能带结构模拟的结果,讨论了GaN帽层引起的能带变化同AlGaN/GaN HEMT肖特基特性之间的关系,比较了有无GaN帽层的HEMT肖特基特性的变化,从模拟计算和实验结果来看,由于GaN...
[期刊论文] 作者：XiangdongLi,KarenGeens,NooshinAmirifar,MingZhao,ShuzhenYou,NielsPosthuma,HuLiang,GuidoGroeseneken,StefaanDecoutere,
来源：JournalofSemiconductors 年份：2021
We demonstrate the key module of comparators in GaN ICs, based on resistor-transistor logic (RTL) on...The fundamental inverters in the comparator consist of a p-GaN gate HEMT and a 2DEG resistor as the load...
[期刊论文] 作者：付丙磊,刘乃鑫,刘喆,李晋闽,王军喜,,
来源：Journal of Semiconductors 年份：2014
The advantages of In GaN/GaN light emitting diodes(LEDs) with p-GaN grown under high pressures are studied.It...
[期刊论文] 作者：刘炜,赵德刚,江德生,陈平,刘宗顺,朱建军,李翔,梁锋,刘建平,杨辉,,
来源：Chinese Physics B 年份：2015
In GaN/GaN multiple quantum well(MQW) green light-emitting diodes(LEDs) with varying In GaN quantum well...
[期刊论文] 作者：陈俊,张书明,张宝顺,朱建军,冯淦,段俐宏,王玉田,杨辉,郑,
来源：中国科学E辑 年份：2004
The influence of growth pressure of GaN buffer layer on the properties of MOCVD GaN on α-Al2O3 has been...
[期刊论文] 作者：Liu Zhe Wang Junxi Wang Xiaol,
来源：中国稀土学报：英文版 年份：2006
The surface morphology of GaN grown by MOCVD on GaN/Si template was studied....
[期刊论文] 作者：Liu Zhe,Wang Junxi,Wang Xiaoli,
来源：稀土学报（英文版） 年份：2004
The surface morphology of GaN grown by MOCVD on GaN/Si template was studied....
Deposition and characterization of BiFeO3 thin films by pulsed laser deposition on GaN and AlGaN/GaN
[会议论文] 作者：W.B.Luo,J.Zhu,Y.R.Li,X.P.Wang,Y.Zhang,
来源：第四届国际表面与界面科学与工程学术会议(The Fourth International Conference on S 年份：2009
BiFeO3 (BFO) thin films was deposited by pulsed laser deposition (PLD) on GaN and AlGaN/GaN semiconductor...substrates.It was found that BFO films deposited directly on GaN show polycrystalline state wi...
[学位论文] 作者：杜金娟,
来源：西安电子科技大学 年份：2021
作为典型的宽禁带半导体材料,氮化镓（GaN）具有介电常数小、禁带宽度大、导电性能良好、化学性能稳定等优点,在很多领域都有广泛的应用。...随着GaN异质外延质量的提升以及p型掺杂问题的解决,GaN基发光二极管实现了商业化。迄今为止,GaN材料在新一代发光二极管、激光器、探测器等器件方面发挥着重要的作用。...然而,GaN材料以及GaN基发光二极管仍有许多问题需要解决。在GaN材料的生长过程中,由于生长条件、衬...
[期刊论文] 作者：LI FengHua,GAO Xu,YUAN YuanLin,
来源：中国科学：技术科学英文版 年份：2014
GaN PIN betavoltaic nuclear batteries are demonstrated in this work.GaN epitaxial layers were grown on...2-inch sapphire sub-strates by MOCVD,and then the GaN PIN...
[期刊论文] 作者：刘鹤丹, 赵旭磊, 叶汉平, 王健,
来源：物联网技术 年份：2023
自2014年生成对抗网络GAN（Generative Adversarial Network）模型被提出以来，GAN已成为无监督学习中最受关注的方法之一。...近年来，众多学者基于对经典GAN的研究提出了一系列变体模型及适用于各类应用场景的方法。本文对GAN的发展历程及重要的GAN变体模型进行了概括、分析、总结。...首先对GAN的基本理论进行了简要概述，分析了GAN经典模型的架构和特点；然后介绍了具有一定影...
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