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Synthesis of GaN nanorods on Si substrates with assistance of the volatilization of ZnO middle layer
[期刊论文] 作者：Zhuang Huizhao,Gao Haiyong,Xue Chengshan,WANG Shuyun,DONG Zhihua,HE Jianting,
来源：稀有金属（英文版） 年份：2005
GaN nanorods have successfully been synthesized on Si(111) substrates via ammoniating ZnO/Ga2O3 films at 950℃. Ga2O3 thin films and ZnO middle layers were depo...
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