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,Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with
[期刊论文] 作者：LIN Guo-Qiang,ZENG Yi-Ping,WANG Xiao-Liang,LIU Hong-Xin,
来源：中国物理快报（英文版） 年份：2008
Hexagonal GaN is grown on a Si(111) substrate with AlN as a buffer layer by gas source molecular beam epitaxy(GSMBE) with ammonia. The thickness of AlN buffer i...
[期刊论文] 作者：YAN Chang-Chun,CUI Yi-Ping,WANG Qiong,ZHUO Shing-Chuang,
来源：中国物理快报(英文版) 年份：2008
A symmetrical π-shaped metaaterial is investigated.Numerical simulations exhibit the negative-refractive property of this structure.The complex refractive inde...
[期刊论文] 作者：Gao Hong-Ling,Zeng Yi-Ping,Wang Bao-Qiang,Zhu Zhan-Ping,Wang Zhan-Guo,
来源：中国物理B（英文版） 年份：2008
A series of metamorphic high electron mobility transistors (MMHEMTs) with different V/Ⅲ flux ratios are grown on GaAs (001) substrates by molecular beam epitax...
[期刊论文] 作者：GAO Hai-Yong,YAN Fa-Wang,FAN Zhong-Chao,LI Jin-Min,ZENG Yi-Ping,WANG Guo-Hong,
来源：中国物理快报（英文版） 年份：2008
p-GaN surfaces are nano-roughened by plasma etching to improve the optical performance of GaN-based light emitting diodes (LEDs). The nano-roughened GaN present...
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