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[期刊论文] 作者：CHEN Meng WANG Xi LIN Cheng-Lu,
来源：核技术：英文版 年份：2005
In recent years, novel structure SOI materials have been fabricated successfully. Also, SiGeOI (SGOI)material, an ideal substrate for realizing strained-silicon...
[期刊论文] 作者：Zheng Zhong-Shan,Liu Zhong-Li,Zhang Guo-Qiang,Li Ning,Fan Kai,Zhang En-Xia,Yi Wan-Bing,Chen Meng,Wang,
来源：中国物理（英文版） 年份：2005
The effect of implanting nitrogen into buried oxide on the top gate oxide hardness against total irradiation does has been investigated with three nitrogen impl...
[期刊论文] 作者：ZHENG Zhong-Shan,LIU Zhong-Li,ZHANG Guo-Qiang,LI Ning,FAN Kai,ZHANG En-Xia,YI Wan-Bing,CHEN Meng,WANG,
来源：中国物理快报（英文版） 年份：2005
Effects of techniques of implanting nitrogen into buried oxide on the characteristics of the partially depleted silicon-on-insulator (SOI) p-channel metal-oxide...
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