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Effective interface passivation of a Ge/HfO_2 gate stack using ozone pre-gate treatment and ozone am
[期刊论文] 作者：赵梅,梁仁荣,王敬,许军,,
来源：Journal of Semiconductors 年份：2013
The physical and electrical properties of a Ge/GeO_2/HfO_2/Al gate stack are investigated.A thin interfacial GeO_2 layer(~ 1 nm) is formed between Ge and HfO_2...
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