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Atomic-layer-deposited Al_2O_3 and HfO_2 on InAlAs: A comparative study of interfacial and electrica
[期刊论文] 作者：武利翻,张玉明,吕红亮,张义门,,
来源：Chinese Physics B 年份：2016
Al_2O_3 and HfO_2 thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition(ALD).The interfacial properties are rev...
[期刊论文] 作者：袁昊,宋庆文,汤晓燕,元磊,张义门,张玉明,,
来源：大功率变流技术 年份：2016
为了更好地研究温度对碳化硅结势垒肖特基二极管(SiC JBS)静态电学参数的影响,我们成功制备了1.2 k V SiC JBS并对其在25℃~150℃温度范围内的静态I-V特性进行了研究。结果显...
[期刊论文] 作者：宋庆文,汤晓燕,袁昊,王悦湖,张艺蒙,郭辉,贾仁需,吕红亮,张义门,张玉明,,
来源：Chinese Physics B 年份：2016
In this paper, 1.2 kV, 3.3 kV, and 5.0 kV class 4H–SiC power Schottky barrier diodes(SBDs)are fabricated with three N-type drift layer thickness values of 10...
[期刊论文] 作者：宋庆文,汤晓燕,袁昊,王悦湖,张艺蒙,郭辉,贾仁需,吕红亮,张义门,张玉明,,
来源：Chinese Physics B 年份：2016
In this paper, 1.2 kV, 3.3 kV, and 5.0 kV class 4H–SiC power Schottky barrier diodes(SBDs)are fabricated with three N-type drift layer thickness values of 10 μm, 30 μm, and 50 μm, respectively. The av...
Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconduc
[期刊论文] 作者：宋庆文,汤晓燕,何艳静,唐冠男,王悦湖,张艺蒙,郭辉,贾仁需,吕红亮,张义门,张玉明,,
来源：Chinese Physics B 年份：2016
In this paper, the normally-off N-channel lateral 4H–Si C metal–oxide–semiconductor field-effect transistors(MOSFFETs) have been fabricated and characterized...
Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal–oxid
[期刊论文] 作者：贾一凡,吕红亮,钮应喜,李玲,宋庆文,汤晓燕,李诚瞻,赵艳黎,肖莉,王梁永,唐光明,张义门,张玉明,,
来源：Chinese Physics B 年份：2016
The effect of nitric oxide(NO) annealing on charge traps in the oxide insulator and transition layer in n-type4H–Si C metal–oxide–semiconductor(MOS) devices...
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