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[期刊论文] 作者：Yu Chun-Li,Yang Lin-An,Hao Yue,
来源：中国物理（英文版） 年份：2004
A novel model for lightly-doped-drain (LDD) MOSFETs is proposed, which utilizes the empirical hyperbolic tangent function to describe the Ⅰ-Ⅴcharacteristics....
,Point defect determination by photoluminescence and capacitance-voltage characterization in a GaN t
[期刊论文] 作者：Li Liang,Yang Lin-An,Zhou Xiao-Wei,Zhang Jin-Cheng,Hao Yue,
来源：中国物理B（英文版） 年份：2013
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,Improved crystal quality of GaN film with the in-plane lattice-matched In0.17Al0.83N interlayer gro
[期刊论文] 作者：Li Liang,Yang Lin-An,Xue Jun-Shuai,Cao Rong-Tao,Xu Sheng-Rui,Zhang Jin-Cheng,Hao Yue,
来源：中国物理B（英文版） 年份：2014
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[期刊论文] 作者：Feng Qian,Tian Yuan,Bi Zhi-Wei,Yue Yuan-Zheng,Ni Jin-Yu,Zhang Jin-Cheng,Hao Yue,Yang Lin-An,
来源：中国物理B（英文版） 年份：2009
This paper discusses the effect of N2 plasma treatment before dielectric deposition on the electrical performance of a Al2O3/AlGaN/GaN metal-insulator-semicondu...
[期刊论文] 作者：Yang Lin-An(杨林安),Yu Chun-Li(于春利),Zhang Yi-Men(张义门),Zhang Yu-Ming(张玉明),
来源：中国物理（英文版） 年份：2003
The process-related surface state effect is investigated the fabrication of SiC devices, and a nonlinear model for 4H-SiC power metal-semiconductor field effect...
,AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Lamin
[期刊论文] 作者：Zhi-Wei,HAO Yue,FENG Qian,GAO Zhi-Yuan,ZHANG Jin-Cheng,MAO Wei,ZHANG Kai,MA Xiao-Hua,LIU Hong-Xia,YANG Lin-An,
来源：中国物理快报（英文版） 年份：2012
We investigate the characteristics of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with a NbAlO/Al2O3 lamination diele...
[期刊论文] 作者：Hao Yao,Zhang Jin-Cheng,Liu Hong-Xia,Bi Zhi-Wei,Xu Sheng-Rui,Xue Jun-Shuai,Ma Xiao-Hua,Wang Chong,Yang Lin-An,
来源：中国物理B（英文版） 年份：2011
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,Fabrication and Characteristics of AIInN/A1N/GaN MOS-HEMTs with Ultra-Thin Atomic Layer Deposited A
[期刊论文] 作者：MAO Wei,ZHANG Jin-Cheng,XUE Jun-Shuai,HAO Yao,MA Xiao-Hua,WANG Chong,LIU Hong-Xia,XU Sheng-Rui,YANG Lin-An,
来源：中国物理快报(英文版) 年份：2010
Al0.85In0.15N/AlN/GaN metal-oxide-semiconductor high electron mobility transistors(MOS-HEMTs)employing a 3-nm ultra-thin atomic-layer deposited(ALD)Al2O3 gate d...
[期刊论文] 作者：Wang Shou-Guo(王守国),Yang Lin-An(杨林安),Zhang Yi-Men(张义门),Zhang Yu-Ming(张玉明),Zhang Zhi-Yong(张志勇),Yan Jun-Feng,
来源：中国物理（英文版） 年份：2003
This paper describes the fabrication and characteristics of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs).SBDs are fabricated by nitrogen ion implantatio...
,The effect of a Hf02 insulator on the improvement of breakdown voltage in field-plated GaN-based HE
[期刊论文] 作者：Wei,Yang Cui,Hao Yue,Ma Xiao-Hua,Wang Chong,Zhang Jin-Cheng,Liu Hong-Xia,Bi Zhi-Wei,Xu Sheng-Rui,Yang Lin-An,
来源：中国物理B（英文版） 年份：2011
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