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[期刊论文] 作者：SongYin ZhangChonghong,
来源：近代物理研究所和兰州重离子加速器实验室年报：英文版 年份：2003
In the present work the photoluminescence character of sapphire implanted with inert gas ions was studied. Sapphire single crystals were implanted with 120keV H...
[期刊论文] 作者：ZhangChonghong,SongYin,DuanJin,
来源：近代物理研究所和兰州重离子加速器实验室年报：英文版 年份：2003
Gallium Nitride (GaN) is an important material for the development of novel short-wave-length photonicdevices or high-frequency, high-power electronic devices....
[期刊论文] 作者：ZhangChonghong,SongYin,DuanJin,
来源：近代物理研究所和兰州重离子加速器实验室年报：英文版 年份：2003
The understanding of mechanisms of damage evolution in silicon carbide bombarded with energetic heliumions is important for the use of this material in future f...
[期刊论文] 作者：ZhangChonghong,SunYoumei,SongY,
来源：近代物理研究所和兰州重离子加速器实验室年报：英文版 年份：2002
Silicon carbide is a technologically important material due to its superior mechanical and electronic properties. The understanding of defect production in...
[期刊论文] 作者：WangZhiguang ZhangChonghong, Z,
来源：近代物理研究所和兰州重离子加速器实验室年报：英文版 年份：2002
We have proposed a novel technique, 'low energy ion implantation + swift heavy ion irradiation', for synthesizing new structures in atom mixed mate...
[期刊论文] 作者：ZhangChonghong,S.E.Donnelly,J.,
来源：近代物理研究所和兰州重离子加速器实验室年报：英文版 年份：2002
【正】 In this work we present a model in an effort to give an explanation of the observed cross-sectional features described as follows of the bubble layer of...
[期刊论文] 作者：J.H.Evans,ZhangChonghong,WangZ,
来源：近代物理研究所和兰州重离子加速器实验室年报：英文版 年份：2002
The understanding of the behavior of chlorine in silicon is useful for several applications, for example, plasma etching of silicon, a proposed technique f...
[期刊论文] 作者：ZhangChonghong,SunYoumei,T.Shi,
来源：近代物理研究所和兰州重离子加速器实验室年报：英文版 年份：2003
The study of damage evolution in silicon carbide bombarded with energetic helium ions is important for the use of this material in future fusion reactors. Heavi...
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