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[期刊论文] 作者：QIAN Cong,ZHANG Zheng-Xuan,ZHA,
来源：中国物理C（英文版） 年份：2008
In this work,we investigate the back-gate I-V characteristics for two kinds of NMOSFET/SIMOX transistors with H gate structure fabricated on two different SOI w...
[期刊论文] 作者：BI Da-Wei,ZHANG Zheng-Xuan,ZHA,
来源：中国物理C 年份：2004
The total dose radiation response of pseudo-MOS transistors fabricated in hardened and unhardened FD (fully-depleted) SIMOX (Separation by Implanted Oxygen) SOI...
[期刊论文] 作者：TIAN Hao,ZHANG Zheng-Xuan,HE W,
来源：黑龙江科技学院学报 年份：2008
为探究吕家坨井田地质构造格局,根据钻孔勘探资料,采用分形理论和趋势面分析方法,研究了井田7...
[期刊论文] 作者：HUANG Hui-Xiang,BI Da-Wei,PENG Chao,ZHANG Yan-Wei,ZHANG Zheng-Xuan,
来源：中国物理快报（英文版） 年份：2013
An anomalous total dose effect is observed in narrow-width devices fabricated in a 0.2μm partially-depleted silicon-on-insulator (SOI) technology.The previous...
,A New silicon-on-Insulator Structure of Metal-Oxide-Semiconductor Field Effect Transistor to Reduce
[期刊论文] 作者：LIN Qing,ZHANG Zheng-Xuan,ZHU Ming,XIE Xin-Yun,SONG Hua-Qing,LIN Cheng-Lu,
来源：中国物理快报（英文版） 年份：2003
A new silicon-on-insulator (SOI) device structure is proposed. This new design provides a new path to reduce the temperature of the channel of SOI metal-oxide-s...
,Enhanced Radiation Sensitivity in Short-Channel Partially Depleted Silicon-on-Insulator n-Type Meta
[期刊论文] 作者：PENG Chao,ZHANG Zheng-Xuan,HU Zhi-Yuan,HUANG Hui-Xiang,NING Bing-Xu,BI Da-Wei,
来源：中国物理快报（英文版） 年份：2013
The total ionizing dose effects of partially depleted silicon-on-insulator (SOI) transistors in a 0.13 μm technology are studied by 60 Co γ-ray irradiation.Ra...
[期刊论文] 作者：Xin Xie,Da-Wei Bi,Zhi-Yuan Hu,Hui-Long Zhu,Meng-Ying Zhang,Zheng-Xuan Zhang,Shi-Chang Zou,
来源：中国物理B（英文版） 年份：2018
The influence of characteristics’ measurement sequence on total ionizing dose effect in partially-depleted SOI nMOS-FET is comprehensively studied. We find tha...
[期刊论文] 作者：Li-Hua Dai,Da-Wei Bi,Zhi-Yuan Hu,Xiao-Nian Liu,Meng-Ying Zhang,Zheng-Xuan Zhang,Shi-Chang Zou,
来源：中国物理B（英文版） 年份：2018
Silicon-on-insulator (SOI) devices are sensitive to the total ionizing dose effect due to the existence of buried oxide. In this paper, an extra single-step Si...
,Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose e
[期刊论文] 作者：Peng Chao,Hu Zhi-Yuan,Ning Bing-Xu,Huang Hui-Xiang,Fan Shuang,Zhang Zheng-Xuan,Bi Da-Wei,
来源：中国物理B（英文版） 年份：2014
...
[期刊论文] 作者：Hu Zhi-Yuan,Liu Zhang-Li,Shao-Hua,Zhang Zheng-Xuan,Ning Bing-Xu,Chen Ming,Bi Da-Wei,Zou Shi-Chang,
来源：中国物理B（英文版） 年份：2011
...
[期刊论文] 作者：Liu Zhang-Li,Hu Zhi-Yuan,Zhang Zheng-Xuan,Shao Hua,Chen Ming,Bi Da-Wei,Ning Bing-Xu,Zou Shi-Chang,
来源：中国物理B（英文版） 年份：2011
...
[期刊论文] 作者：CHEN Ming,LUO Hong-Wei,ZHANG Zheng-Xuan,ZHANG En-Xia,YANG Hui,TIAN Hao,WANG Ru,YU Wen-Jie,
来源：中国物理快报（英文版） 年份：2007
Total ionizing dose effects of Si+ ion implanted thermal oxides are studied by 10keV x-ray irradiation. Photo-luminescence (PL) method is engaged to investigate...
[期刊论文] 作者：LIU Zhang-Li,HU Zhi-Yuan,ZHANG Zheng-Xuan,SHAO Hua,NING Bing-Xu,BI Da-Wei,CHEN Ming,ZOU Shi-Chang,
来源：中国物理快报（英文版） 年份：2011
...
,A New Structure of Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor to Suppre
[期刊论文] 作者：ZHU Ming(朱鸣),LIN Qing(林青),ZHANG Zheng-Xuan(张正选),LIN Cheng-Lu(林成鲁),
来源：中国物理快报（英文版） 年份：2003
Considering that the silicon-on-insulator (SOI) devices have an inherent floating body effect, which may cause substantial influences in the performance of SOI...
,Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the b
[期刊论文] 作者：Zhang En-Xia,Qian Cong,Zhang Zheng-Xuan,Lin Cheng-Lu,Wang Xi,Wang Ying-Min,Wang Xiao-He,Zhao Gui-Ru,En,
来源：中国物理（英文版） 年份：2006
The hardening of the buried oxide (BOX) layer of separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers against total-dose irradiation was inv...
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