搜索筛选:
搜索耗时3.8016秒,为你在为你在102,285,761篇论文里面共找到 7 篇相符的论文内容
发布年度:
[期刊论文] 作者：Xiaole CUI,Xiao MA,Feng WEI,Xiaoxin CUI,
来源：中国科学：信息科学（英文版） 年份：2020
Dear editor,rnResistive RAM (RRAM) based logic circuits have attracted much attention in recent years.The IMPLY (material implication) gates are the first publi...
[期刊论文] 作者：Wei Chen,Cui Xiaole,Cui Xiaoxin,Feng Xu,Jin Yufeng,
来源：中国邮电高校学报：英文版 年份：2021
Through-silicon via(TSV)is a key enabling technology for the emerging 3-dimension(3 D)integrated circuits(ICs).However,the crosstalk between the neighboring TSVs is one of the important sources of the soft faults.To suppress the crosstalk,t......
[期刊论文] 作者：Xiaole CUI,Qiang ZHANG,Xiaoxin CUI,Xinan WANG,Jinfeng KANG,Xiaoyan LIU,,
来源：Science China(Information Sciences) 年份：2017
Dear editor,RRAM is regarded as one of the most promising candidates among emerging nonvolatile memory technologies[1,2].Recently,the 1Tn R RRAM structure,in wh...
[期刊论文] 作者：Kai LIAO,Xiaoxin CUI,Nan LIAO,Tian WANG,Dunshan YU,Xiaole CUI,,
来源：Science China(Information Sciences) 年份：2016
In this paper, we first reconstruct a novel planar static contention-free single-phase-clocked flipflop(S2CFF) based on high-performance fin-type field-effect t...
Reliability evaluation of high-performance, low-power FinFET standard cells based on mixed RBB/FBB t
[期刊论文] 作者：Tian Wang,Xiaoxin Cui,Yewen Ni,Kai Liao,Nan Liao,Dunshan Yu,Xiaole Cui,
来源：城市道桥与防洪 年份：2017
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
Reliability evaluation of high-performance,low-power FinFET standard cells based on mixed RBB/FBB te
[期刊论文] 作者：Tian Wang,Xiaoxin Cui,Yewen Ni,Kai Liao,Nan Liao,Dunshan Yu,Xiaole Cui,,
来源：Journal of Semiconductors 年份：2004
With shrinking transistor feature size,the fin-type field-effect transistor(FinFET) has become the most promising option in low-power circuit design due to its...
[期刊论文] 作者：Xiaole CUI,Zuolin CHENG,Chunglen LEE,Xinnan LIN,Yiqun WEI,Xiaogang CHEN,Zhitang SONG,,
来源：Science China(Information Sciences) 年份：2016
Phase change memory(PCM) is one of the most promising candidates for next generation nonvolatile memory. However, PCM suffers from a variety of faults due to it...
相关搜索：
