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[期刊论文] 作者：CHENLi-qun,HUANGXiang-ying,LIMin,HUANGYan-hua,WANGYue-yun,YANGuang-ming,LICheng,
来源：OptoelectronicsLetters 年份：2015
High-performance and tensile-strained germanium (Ge) p-i-n photodetector is demonstrated on Si substrate. The epitaxial Ge layers were prepared in an ultrahigh vacuum chemical vapor deposition (UHV-CVD) system using low temperature Ge buffe......
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