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Shared or Separate Mechanisms for Left-Side Bias Processing? Evidence from Faces and Chinese Charact
[会议论文] 作者：Xiao-Li Ma,Xiao-Hua Cao,
来源：第三届认知科学北京国际研讨会暨第二届国际人脑发育会议 年份：2015
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Shared or Separate Mechanisms for Left-Side Bias Processing? Evidence from Faces and Chinese Charact
[会议论文] 作者：Xiao-Li Ma,Xiao-Hua Cao,
来源：中国科学院心理研究所,北京大学心理学系 年份：2015
Left-side bias(LSB) is an important hallmark in expertise processing that observers rely more heavily on information conveyed by left-side of the stimuli(from the viewers perspective).The goal of the...
[期刊论文] 作者：Ma Xiao-Hua,Cao Yan-Rong,Hao Yue,
来源：中国物理B（英文版） 年份：2010
This paper studies negative bias temperature instability (NBTI) under alteant and alteating current (AC)stress. Under alteant stress, the degradation smaller th...
,The electrical characteristics of a 4H-silicon carbide metal-insulator-semiconductor structure with
[期刊论文] 作者：Liu Li,Yang Yin-Tang,Ma Xiao-Hua,
来源：中国物理B（英文版） 年份：2011
...
[期刊论文] 作者：Yang Ling,Ma Xiao-Hua,Feng Qian,Hao Yue,
来源：中国物理B（英文版） 年份：2008
In this paper, we have discussed the effect of electrical stress on GaN light emitting diode (LED). With the lapse of time, the LED with an applied large curren...
,Study on the drain bias effect on negative bias temperature instability degradation of an ultra-sho
[期刊论文] 作者：Cao Yan-Rong,Ma Xiao-Hua,Hao Yue,Hu Shi-Gang,
来源：中国物理B（英文版） 年份：2010
...
[期刊论文] 作者：Ma Xiao-Hua,Cao Yan-Rong,Hao Yue,Zhang Yue,
来源：中国物理B（英文版） 年份：2011
...
,Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility tran
[期刊论文] 作者：Quan si,Hao Yue,Ma xiao-Hua,Yu Hui-You,
来源：中国物理B（英文版） 年份：2011
...
[期刊论文] 作者：Cao Yan-Rong,Ma Xiao-Hua,Hao Yue,Tian Wen-Chao,
来源：中国物理B（英文版） 年份：2010
...
,Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode highelectron-mobility
[期刊论文] 作者：Quan Si,Hao Yue,Ma Xiao-Hua,Yu Hui-You,
来源：中国物理B（英文版） 年份：2011
...
,Effect of substrate bias on negative bias temperature instability of ultra-deep sub-micro p-channel
[期刊论文] 作者：Cao Yan-Rong,Hao Yue,Ma Xiao-Hua,Hu Shi-Gang,
来源：中国物理B（英文版） 年份：2009
The effect of substrate bias on the degradation during applying a negative bias temperature (NBT) stress is studied in this paper. With a smaller gate voltage s...
[期刊论文] 作者：CAO Yan-Rong,HU Shi-Gang,MA Xiao-Hua,HAO Yue,
来源：中国物理快报（英文版） 年份：2008
Recovery phenomenon is observed under negative gate voltage stress which is smaller than the previous degradation stress. We focus on the drain current to study...
[期刊论文] 作者：YANG Ling,HAO Yue,ZHOU Xiao-Wei,MA Xiao-Hua,
来源：中国物理快报（英文版） 年份：2009
Elxtronic properties, surface chemistry and surface morphology of plasma-treated n-Alo.4Gao.6N material are studied by electrical contact measurements, atomic f...
[期刊论文] 作者：CAO Yan-nong,HAO Yue,MA Xiao-Hua,YU Lei,
来源：中国物理快报（英文版） 年份：2008
Negative bias temperature instability (NBTI) and stress-induced leakage current (SILC) both are more serious due to the aggressive scaling lowering of devices....
[期刊论文] 作者：QUAN Si,MA Xiao-Hua,ZHENG Xue-Feng,HAO Yue,
来源：中国物理快报（英文版） 年份：2013
AlGaN/GaN high electron mobility transistors (HEMTs)[1-3] are excellent candidates for high power switches,microwave amplifiers,and high temperature integrated...
[期刊论文] 作者：SUN Jing,WANG Hong,WANG Zhan,WU Shi-Wei,MA Xiao-Hua,
来源：中国物理快报（英文版） 年份：2015
The contact-size-dependent characteristic of cutoff frequency fT in bottom-contact organic thin film transistors (OTFTs) is studied.The effects of electrode thi...
[期刊论文] 作者：Ma Xiao-Hua,Hao Yue,Wang Jian-Ping,Cao Yan-Rong,Chen Hai-Feng,
来源：中国物理（英文版） 年份：2006
Hot carriers injection (HCI) tests for ultra-short channel n-MOSFET devices were studied. The experimental data of short channel devices (75-90 nm), which does...
,Hot-carrier degradation for 90 nm gate length LDD-NMOSFET with ultra-thin gate oxide under low gate
[期刊论文] 作者：Chen Hai-Feng,Hao Yue,Ma Xiao-Hua,Li Kang,Ni Jin-Yu,
来源：中国物理（英文版） 年份：2007
The hot-carrier degradation for 90 nm gate length lightly-doped drain (LDD) NMOSFET with ultra-thin (1.4 nm) gate oxide under the low gate voltage (LGV) (at Vg=...
,Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effe
[期刊论文] 作者：Zhang Yue,Zhuo Qing-Qing,Liu Hong-Xia,Ma Xiao-Hua,Hao Yue,
来源：中国物理B（英文版） 年份：2014
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[期刊论文] 作者：Lei Xiao-Yi,Liu Hong-Xia,Zhang Yue,Ma Xiao-Hua,Hao Yue,
来源：中国物理B（英文版） 年份：2014
...
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