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[期刊论文] 作者：Xiao-Hua Luo,Wei-Jun Ren,Wei Jin,Zhi-Dong Zhang,
来源：中国物理B（英文版） 年份：2017
Solid refrigeration technology based on the elastocaloric effect has a great potential altative to the conventional vapor compression cooling.Here we report the...
,LT(K63/R72), a New Mutant of Escherichia coli Heat-labile Enterotoxin,Exhibits Characteristics More
[期刊论文] 作者：Qiang FENG,Jun YANG,Ping LUO,Wei-Jun ZHANG,Quan-Ming ZOU,
来源：生物化学与生物物理学报（英文版） 年份：2005
LT(K63), a non-toxic mutant and LT(R72), a low toxic mutant of E. coli heat-labile enterotoxin are frequently used mucosal adjuvants. In many cases, the adjuvan...
[期刊论文] 作者：LUO Wei-Jun,CHEN Xiao-Juan,YUAN Ting-Ting,PANG Lei,LIU Xin-Yu,
来源：中国物理快报（英文版） 年份：2013
The characteristics of AlGaN/GaN Schottky diodes as polar liquid sensors are reported.Circular structures,with a gate metal diameter of 200 μm,are designed and...
,Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transis
[期刊论文] 作者：Pu Yan,Pang Lei,Chen Xiao-Juan,Yuan Ting-Ting,Luo Wei-Jun,Liu Xin-Yu,
来源：中国物理B（英文版） 年份：2004
...
,Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structur
[期刊论文] 作者：GUO Lun-Chun,WANG Xiao-Liang,XIAO Hong-Ling,RAN Jun-Xue,Wang Cui-Mei,MA Zhi-Yong,LUO Wei-Jun,WANG Zhan-Guo,
来源：中国物理快报(英文版) 年份：2009
Electrical properties of AlyGa1-yN/AlxGa1-xN/AIN/GaN structure are investigated by solving coupled Schrodinger and Poisson equation self-consistently. Our calcu...
,Growth and Characterization of AlGaN/AlN/GaN HEMT Structures with a Compositionally Step-Graded AlG
[期刊论文] 作者：MA ZHI-Yong,WANG Xiao-Liang,HU Guo-Xin,RAN Jun-Xue,XIAO Hong-Ling,LUO Wei-Jun,TANG Jian,LI Jian-Ping,,
来源：中国物理快报（英文版） 年份：2007
A new AlGaN/AlN/GaN high electron mobility transistor (HEMT) structure using a Compositionally step-graded AlGaN barrier layer is grown on sapphire by metalorga...
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