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[期刊论文] 作者：Hrant N. Yeritsyan,Vachagan V.,
来源：现代物理(英文) 年份：2013
Equipment has been designed and created for experimental simulation of space environment conditions of Geostationary orbit of the Earth. The following condition...
[期刊论文] 作者：Hrant N. Yeritsyan,Aram A. Sah,
来源：现代物理(英文) 年份：2012
The influence of electron radiation on the properties of semiconducting silicon single crystals (Si)—both n- and p-types (currently one of the most widely appl...
[期刊论文] 作者：Hrant N. Yeritsyan,Aram A. Sah,
来源：现代物理(英文) 年份：2015
Present paper describes the investigation of vacancy (V) and interstitial (I) annihilation on oxygen atoms by means of infrared (IR) absorption and Hall-effect...
[期刊论文] 作者：Hrant N. Yeritsyan,Aram A. Sah,
来源：现代物理(英文) 年份：2018
This paper reports results from an investigation of the interaction of displaced Si-self atoms (I) and their vacancies (V), with impurities in crystalline silic...
[期刊论文] 作者：Hrant N. Yeritsyan,Aram A. Sah,
来源：现代物理(英文) 年份：2015
While considerable progress has been achieved in radiation influence on the solid states, the quantitative assessment of defect production is very scarce. In th...
[期刊论文] 作者：Hrant N. Yeritsyan,Aram A. Sah,
来源：现代物理(英文) 年份：2019
The recombination processes for charge carriers have been studied in n-type silicon crystals which were irradiated by pico-second duration pulse electrons with...
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