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[期刊论文] 作者：Hassen Dakhlaoui,
来源：光学与光子学期刊(英文) 年份：2012
We study in this paper the intersubband optical absorption of Si doped GaAs layer for different applied electric fields and donors concentration. The electronic...
[期刊论文] 作者：Hassen Dakhlaoui,
来源：中国物理B（英文版） 年份：2014
...
,Quantum Size and Doping Concentration Effects on the Current-Voltage Characteristics in GaN Resonan
[期刊论文] 作者：Hassen Dakhlaoui,
来源：中国物理快报（英文版） 年份：2013
We theoretically investigate the effects of quantum size and doping concentration on the current-voltage characteristics of GaN resonant tunneling diodes.The re...
[期刊论文] 作者：Hassen Dakhlaoui,,
来源：Chinese Physics B 年份：2014
In this paper, we theoretically study the effects of doping concentration NDand an external electric field on the intersubband transitions in InxAl(1-x)N/InyGa(...
[期刊论文] 作者：Shaffa Almansour,Hassen Dakhlaoui,Emane Algrafy,
来源：中国物理快报（英文版） 年份：2016
...
Effect of Si δ-Doping on the Linear and Nonlinear Optical Absorptions and Refractive Index Changes i
[期刊论文] 作者：Shaffa Almansour,Hassen Dakhlaoui,Emane Algrafy,,
来源：Chinese Physics Letters 年份：2016
In the framework of effective mass approximation,we theoretically investigate the electronic structure of the Si S-doped InAIN/GaN single quantum well by solvin...
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