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,Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-μm quantum dot laser
[期刊论文] 作者：Hui-Ming Hao,Xiang-Bin Su,Jing Zhang,Hai-Qiao Ni,Zhi-Chuan Niu,
来源：中国物理B（英文版） 年份：2019
Systematic investigation of InAs quantum dot (QD) growth using molecular beam epitaxy has been carried out, focus-ing mainly on the InAs growth rate and its eff...
[期刊论文] 作者：Bing-Hui Niu,Teng-Fei Yan,Hai-Qiao Ni,Zhi-Chuan Niu,Xin-Hui Zhang,
来源：中国物理快报（英文版） 年份：2016
...
[期刊论文] 作者：Ben Ma,Si-Hang Wei,Ze-Sheng Chen,Xiang-Jun Shang,Hai-Qiao Ni,Zhi-Chuan Niu,
来源：中国物理B（英文版） 年份：2018
Near-infrared single photon sources in telecommunication bands,especially at 1550 nm,are required for long-distance quantum communication.Here a down-conversion...
,Intracavity Spontaneous Parametric Down-Conversion in Bragg Reflection Waveguide Edge Emitting Diod
[期刊论文] 作者：Si-Hang Wei,Xiang-Jun Shang,Ben Ma,Ze-Sheng Chen,Yong-Ping Liao,Hai-Qiao Ni,Zhi-Chuan Niu,
来源：中国物理快报（英文版） 年份：2017
A four-wavelength Bragg reflection waveguide edge emitting diode based on intracavity spontaneous parametric down-conversion and four-wave mixing (FWM) processe...
[期刊论文] 作者：Yong-Zhou Xue,Ze-Sheng Chen,Hai-Qiao Ni,Zhi-Chuan Niu,De-Sheng Jiang,Xiu-Ming Dou,Bao-Quan Sun,
来源：中国物理B（英文版） 年份：2017
We report on the resonance fluorescence (RF) from single InAs quantum dots (QDs) emitting at the telecom band of 1300 nm.The InAs/GaAs QDs are embedded in a pla...
Self-assembled semiconductor quantum dots decorating the facets of GaAs nanowire for single-photon e
[期刊论文] 作者：Ying Yu,Guo-Wei Zha,Xiang-Jun Shang,Shuang Yang,Ban-Quan Sun,Hai-Qiao Ni,Zhi-Chuan Niu,,
来源：National Science Review 年份：2017
In this chapter, we discuss the epitaxial growth of self-assembled quantum dots(QDs) in GaAs nanowires(NWs) and the characteristics of their single-photon emiss...
,Effect of growth temperature of GaAsxSb1-x metamorphic buffer layer on electron mobility of InAs/Al
[期刊论文] 作者：Jing Zhang,Hong-Liang Lv,Hai-Qiao Ni,Shi-Zheng Yang,Xiao-Ran Cui,Zhi-Chuan Niu,Yi-Men Zhang,Yu-Ming Zhang,
来源：中国物理B（英文版） 年份：2019
The InAs/AlSb heterostructures with step-graded GaAsxSb1-x metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied.The step-grade...
[期刊论文] 作者：Si-Hang Wei,Ben Ma,Ze-Sheng Chen,Yong-Ping Liao,Hong-Yue Hao,Yu Zhang,Hai-Qiao Ni,Zhi-Chuan Niu,
来源：中国物理B（英文版） 年份：2017
In this study,two-section mode-locked semiconductor lasers with different numbers of quantum wells and different types of waveguide structures are made.Their ul...
,High-Power Single-Spatial-Mode GaSb Tapered Laser around 2.0 μm with Very Small Lateral Beam Diverg
[期刊论文] 作者：Shu-Shan Huang,Yu Zhang,Yong-Ping Liao,Cheng-Ao Yang,Xiao-Li Chai,Ying-Qiang Xu,Hai-Qiao Ni,Zhi-Chuan,
来源：中国物理快报（英文版） 年份：2017
We report high-power single-spatial-mode type-Ⅰ GaSb-based tapered lasers fabricated on the InGaSb/AlGaAsSb material system.A straight ridge and three differen...
,Two-dimensional electron gas characteristics of InP-based high electron mobility transistor teraher
[期刊论文] 作者：Jin-Lun Li,Shao-Hui Cui,Jian-Xing Xu,Xiao-Ran Cui,Chun-Yan Guo,Ben Ma,Hai-Qiao Ni,Zhi-Chuan Niu,
来源：中国物理B（英文版） 年份：2018
The samples of InxGa1?xAs/In0.52Al0.48As two-dimensional electron gas (2DEG) are grown by molecular beam epitaxy (MBE). In the sample preparation process, the I...
[期刊论文] 作者：Jian-Xing Xu,Jin-Lun Li,Si-Hang Wei,Ben Ma,Yi Zhang,Yu Zhang,Hai-Qiao Ni,Zhi-Chuan Niu,
来源：中国物理B（英文版） 年份：2017
A mesa-type enhanced InGaAs/InAlAs multilayer heterostructure (MLHS) terahertz photoconductive antenna (PCA) at 1550 nm is demonstrated on an InP substrate.The...
[会议论文] 作者：Ying Yu,Guo-Wei Zha,Mi-Feng Li,Xiang-Jun Shang,Jian-Xing Xu,Li-Juan Wang,Hai-Qiao Ni,Zhi-Chuan Niu,
来源：International Conference on Nanoscience & Technology,China 2 年份：2013
Our recent works on the Molecular Beam Epitaxial growth and quantum photonic characteristics of self-assembled InAs/GaAs quantum dots (QDs) embedded with layers, nanowires and cavities are reported.Sm...
[期刊论文] 作者：Yu Zhang,Cheng-Ao Yang,Shu-Shan Huang,Ye Yuan,Yi Zhang,Jin-Ming Shang,Fu-Hui Shao,Ying-Qiang Xu,Hai-Qiao Ni,
来源：中国物理B（英文版） 年份：2019
InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb bar-riers of the lasers are grown with digital alloy techn...
[期刊论文] 作者：Fu-Hui Shao,Cheng-Ao Yang,Sheng-Wen Xie,Shu-Shan Huang,Ye Yuan,Jin-Ming Shang,Yu Zhang,Ying-Qiang Xu,Hai-Qiao Ni,
来源：中国物理B（英文版） 年份：2018
We report a type-II GaSb-based interband cascade laser operating a continuous wave at room temperature. The cas-cade region of interband cascade laser was desig...
[期刊论文] 作者：Xiang-Bin Su,Sheng-Wen Xie,Jin-Ming Shang,Yun-Hao Zhao,Chen-Yuan Cai,Ren-Chao Che,Ying-Qiang Xu,Hai-Qiao Ni,
来源：中国物理B（英文版） 年份：2018
We compare the effect of InGaAs/GaAs strained-layer superlattice (SLS) with that of GaAs thick buffer layer (TBL) serving as a dislocation filter layer. The InG...
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