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,A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFET
[期刊论文] 作者：Gopi Krishna Saramekala,Sarvesh Dubey,Pramod Kumar Tiwari,
来源：中国物理B（英文版） 年份：2015
In this paper, a surface potential based threshold voltage model of fully-depleted (FD) recessed-source/drain (Re-S/D) silicon-on-insulator (SOI) metal-oxide se...
[期刊论文] 作者：Gopi Krishna Saramekala,Sarvesh Dubey,Pramod Kumar Tiwari,,
来源：Chinese Physics B 年份：2015
In this paper, a surface potential based threshold voltage model of fully-depleted(FD) recessed-source/drain(Re-S/D)silicon-on-insulator(SOI) metal-oxide semico...
Analytical model for subthreshold current and subthreshold swing of short-channel double-material-ga
[期刊论文] 作者：Pramod Kumar Tiwari,Gopi Krishna Saramekala,Sarvesh Dubey,Anand Kumar Mukhopadhyay,,
来源：Journal of Semiconductors 年份：2014
The present work gives some insight into the subthreshold behaviour of short-channel double-materialgate strained-silicon on silicon–germanium MOSFETs in terms...
[期刊论文] 作者：Pramod Kumar Tiwari,Mukesh Kumar,Ramavathu Sakru Naik,Gopi Krishna Saramekala,,
来源：Journal of Semiconductors 年份：2016
This work presents a comparative study of the influence of various parameters on the analog and RF properties of silicon-nanotube MOSFETs and nanowire-based gat...
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