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Characteristics of SiO2 Etching by using Pulse-Time Modulation in 60 MHz/2 MHz Dual-Frequency Capaci
[会议论文] 作者:G. Y. Yeom,
来源:2011年第三届微电子及等离子体技术国际会议 年份:2011
The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity,but also low electron temperature....
Low Plasma Induced Damaged Neutral Beam Etching of Metal Gate in Metal Gate/High-k Dielectric CMOSFE
[会议论文] 作者:G. Y. Yeom,
来源:2011年第三届微电子及等离子体技术国际会议 年份:2011
As the critical dimension (CD) of the metal-oxide-semiconductor field effect transistor (MOSFET) is scaled down to 45nm node and below,the compatibility of the present gate (poly-Si) with high-k diele...
[会议论文] 作者:G. Y. Yeom,
来源:2011年第三届微电子及等离子体技术国际会议 年份:2011
For the various electronic devices such as microelectromechanical system (MEMS) devices,thin film transistor-liquid crystal display (TFT-LCD) devices,flexible display devices,etc.,dielectric thin film...
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