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[期刊论文] 作者：D.MUTHARASU,S.SHANMUGAN,
来源：光电子学前沿 年份：2013
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Performance of Chemical Vapor Deposited Boron-Doped AlN Thin Film as Thermal Interface Materials for
[期刊论文] 作者：S.Shanmugan,D.Mutharasu,
来源：金属学报（英文版） 年份：2018
Boron-doped aluminum nitride (B-A1N) thin films were synthesized on A1 substrates by using chemical vapor deposition method by changing the synthesis parameters and were used as thermal interface material for high power light emitting diode......
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