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[期刊论文] 作者:Ma Xiao-Hua,Cao Yan-Rong,Hao Yue, 来源:中国物理B(英文版) 年份:2010
This paper studies negative bias temperature instability (NBTI) under alteant and alteating current (AC)stress. Under alteant stress, the degradation smaller th...
[期刊论文] 作者:Cao Yan-Rong,Ma Xiao-Hua,Hao Yue,Hu Shi-Gang, 来源:中国物理B(英文版) 年份:2010
[期刊论文] 作者:Ma Xiao-Hua,Cao Yan-Rong,Hao Yue,Zhang Yue, 来源:中国物理B(英文版) 年份:2011
[期刊论文] 作者:Cao Yan-Rong,Ma Xiao-Hua,Hao Yue,Tian Wen-Chao, 来源:中国物理B(英文版) 年份:2010
[期刊论文] 作者:Cao Yan-Rong,Hao Yue,Ma Xiao-Hua,Hu Shi-Gang, 来源:中国物理B(英文版) 年份:2009
The effect of substrate bias on the degradation during applying a negative bias temperature (NBT) stress is studied in this paper. With a smaller gate voltage s...
[期刊论文] 作者:CAO Yan-Rong,HU Shi-Gang,MA Xiao-Hua,HAO Yue, 来源:中国物理快报(英文版) 年份:2008
Recovery phenomenon is observed under negative gate voltage stress which is smaller than the previous degradation stress. We focus on the drain current to study...
[期刊论文] 作者:Ma Xiao-Hua,Hao Yue,Wang Jian-Ping,Cao Yan-Rong,Chen Hai-Feng, 来源:中国物理(英文版) 年份:2006
Hot carriers injection (HCI) tests for ultra-short channel n-MOSFET devices were studied. The experimental data of short channel devices (75-90 nm), which does...
[期刊论文] 作者:MA Xiao-Hua,GAO Hai-Xia,CAO Yan-Rong,CHEN Hai-Feng,HAO Yue, 来源:中国物理快报(英文版) 年份:2010
[期刊论文] 作者:Chen Hai-Feng,Hao Yue,Ma Xiao-Hua,Cao Yan-Rong,Gao Zhi-Yuan,Gong Xin, 来源:中国物理(英文版) 年份:2007
The behaviours of three types of hot-hole injections in ultrashort channel lightly doped drain (LDD) nMOSFETs with ultrathin oxide under an altating stress have...
[期刊论文] 作者:Hu Shi-Gang,Hao Yue,Ma Xiao-Hua,Cao Yan-Rong,Chen Chi,Wu Xiao-Feng, 来源:中国物理B(英文版) 年份:2009
[期刊论文] 作者:HU Shi-Gang,HAO Yue,MA Xiao-Hua,CAO Yan-Rong,CHEN Chi,WU Xiao-Feng, 来源:中国物理快报(英文版) 年份:2009
Hot-carrier degradation for 90 nm gate length lightly-doped drain (LDD) NMOSFET with ultra-thin (1.4 nm) gate oxide is investigated under the low gate voltage s...
[期刊论文] 作者:CAO Yan-Rong,MA Xiao-Hua,HAO Yue,ZHU Min-Bo,TIAN Wen-Chao,ZHANG Yue, 来源:中国物理快报(英文版) 年份:2011
[期刊论文] 作者:ZHENG Xue-Feng,FAN Shuang,KANG Di,ZHANG Jian-Kun,CAO Yan-Rong,MA Xiao-Hua,HAO Yue, 来源:中国物理快报(英文版) 年份:2014
[期刊论文] 作者:Cao Yan-Rong,Ma Xiao-Hua,Hao Yue,Zhang Yue,Yu Lei,Zhu Zhi-Wei,Chen Hai-Feng, 来源:中国物理(英文版) 年份:2007
Taking the actual operating condition of complementary metal oxide semiconductor (CMOS) circuit into account,conventional direct current (DC) stress study on ne...
[期刊论文] 作者:Cao Yan-Rong,Yang Yi,Cao Cheng,He Wen-Long,Zheng Xue-Feng,Ma Xiao-Hua,Hao Yue, 来源:中国物理B(英文版) 年份:2015
[期刊论文] 作者:Cao Yan-Rong,He Wen-Long,Cao Cheng,Yang Yi,Zheng Xue-Feng,Ma Xiao-Hua,Hao Yue, 来源:中国物理B(英文版) 年份:2014
[期刊论文] 作者:HU Shi-Gang,CAO Yan-Rong,HAO Yue,MA Xiao-Hua,CHEN Chi,WU Xiao-Feng,ZHOU Qing-Jun, 来源:中国物理快报(英文版) 年份:2008
Degradation of device under substrate hot-electron (SHE) and constant voltage direct-tunnelling (CVDT) stresses are studied using NMOSFET with 1.4-nm gate oxide...
[期刊论文] 作者:Chen Hai-Feng,Hao Yue,Ma Xiao-Hua,Zhang Jin-Cheng,Li Kang,Cao Yan-Rong,Zhang Jin-Feng,Zhou Peng-Ju, 来源:中国物理(英文版) 年份:2006
A specially designed experiment is performed for investigating gate-induced drain leakage (GIDL) current in 90nm CMOS technology using lightly-doped drain (LDD)...
[期刊论文] 作者:Xu Sheng-Rui,Hao Yue,Zhang Jin-Cheng,Zhou Xiao-Wei,Cao Yan-Rong,Ou Xin-Xiu,Mao Wei,Du Da-Chao,Wang Hao, 来源:中国物理B(英文版) 年份:2010
[期刊论文] 作者:Bi Zhi-Wei,Hu Zhen-Hua,Mao Wei,Hao Yue,Feng Qian,Cao Yan-Rong,Gao Zhi-Yuan,Zhang Jin-Cheng,Ma Xiao-Hua, 来源:中国物理B(英文版) 年份:2011
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