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Low Plasma Induced Damaged Neutral Beam Etching of Metal Gate in Metal Gate/High-k Dielectric CMOSFE
[会议论文] 作者：C. K. Kim,G. Y. Yeom,
来源：2011年第三届微电子及等离子体技术国际会议 年份：2011
As the critical dimension (CD) of the metal-oxide-semiconductor field effect transistor (MOSFET) is scaled down to 45nm node and below,the compatibility of the present gate (poly-Si) with high-k diele...
[会议论文] 作者：C. K. Kim,G. Y. Yeom,
来源：2011年第三届微电子及等离子体技术国际会议 年份：2011
For the various electronic devices such as microelectromechanical system (MEMS) devices,thin film transistor-liquid crystal display (TFT-LCD) devices,flexible display devices,etc.,dielectric thin film...
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