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,High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices bar
[期刊论文] 作者：Feng Xu,Peng Chen,Fu-Long Jiang,Ya-Yun Liu,Zi-Li Xie,Xiang-Qian Xiu,Xue-Mei Hua,
来源：中国物理B（英文版） 年份：2017
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,Band Edge Emission Improvement by Energy Transfer in Hybrid Ⅲ-Nitride/Organic Semiconductor Nanostr
[期刊论文] 作者：Fu-Long Jiang,Ya-Ying Liu,Yang-Yang Li,Peng Chen,Bin Liu,Zi-Li Xie,Xiang-Qian Xiu,
来源：中国物理快报（英文版） 年份：2016
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[期刊论文] 作者：Wen-Rong Xie,Bin Liu,Tao Tao,Guo-Gang Zhang,Bao-Hua Zhang,Zi-Li Xie,Peng Chen,Dun-Jun Chen,Rong Zhang,
来源：中国物理快报（英文版） 年份：2017
A sequential deposition method is developed,where the hybrid organic-inorganic halide perovskite (CH3NH3Pb (I1-xBrx)3) is synthesized using precursor solutions...
[期刊论文] 作者：Shan Ding,Yue-Wen Li,Xiang-Qian Xiu,Xue-Mei Hua,Zi-Li Xie,Tao Tao,Peng Chen,Bin Liu,Rong Zhang,You-Dou,
来源：中国物理B（英文版） 年份：2020
The GaN thick films have been grown on porous GaN template and planar metal-organic chemical vapor deposition (MOCVD)-GaN template by halide vapor phase epitaxy...
[期刊论文] 作者：Ze-Ning XIONG,Xiang-Qian XIU,Yue-Wen LI,Xue-Mei HUA,Zi-Li XIE,Peng CHEN,Bin LIU,Ping HAN,Rong ZHANG,You-Dou,
来源：中国物理快报（英文版） 年份：2018
Two-inch Ga2O3 films with (201)-orientation are grown on c-sapphire at 850-1050℃ by hydride vapor phase epitaxy.High-resolution x-ray diffraction shows that pu...
[期刊论文] 作者：Shuang Wang,Yue-Wen Li,Xiang-Qian Xiu,Li-Ying Zhang,Xue-Mei Hua,Zi-Li Xie,Tao Tao,Bin Liu,Peng Chen,Rong,
来源：中国物理B（英文版） 年份：2019
In this work, we prepared the b-Ga2O3@GaN nanowires (NWs) by oxidizing GaN NWs. High-quality hexagonal wurtzite GaN NWs were achieved and the conversion from Ga...
,Structural characterization of Al0.55Ga0.45N epitaxial layer determined by high resolution x-ray di
[期刊论文] 作者：Qing-Jun Xu,Bin Liu,Shi-Ying Zhang,Tao Tao,Zi-Li Xie,Xiang-Qian Xiu,Dun-Jun Chen,Peng Chen,Ping Han,Rong,
来源：中国物理B（英文版） 年份：2017
Structural characteristics of Al0.55Ga0.45N epilayer were investigated by high resolution x-ray diffraction (HRXRD) and transmission electron microscopy (TEM);t...
[期刊论文] 作者：Meng-Han Liu,Peng Chen,Zi-Li Xie,Xiang-Qian Xiu,Dun-Jun Chen,Bin Liu,Ping Han,Yi Shi,Rong Zhang,You-Dou,
来源：中国物理快报（英文版） 年份：2020
Square microdisks with round coers are fabricated using a standard GaN-based blue LED on Si substrates.Whispering gallery-like modes in the square microdisks ar...
[期刊论文] 作者：Fei Cheng,Yue-Wen Li,Hong Zhao,Xiang-Qian Xiu,Zhi-Tai Jia,Duo Liu,Xue-Mei Hua,Zi-Li Xie,Tao Tao,Peng,
来源：中国物理B（英文版） 年份：2019
Single-crystal GaN layers have been obtained by nitridingβ-Ga2O3 films in NH3 atmosphere.The effect of the temperature and time on the nitridation and conversi...
,Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys
[期刊论文] 作者：Qing-Jun Xu,Shi-Ying Zhang,Bin Liu,Zhen-Hua Li,Tao Tao,Zi-Li Xie,Xiang-Qian Xiu,Dun-Jun Chen,Peng Chen,
来源：中国物理B（英文版） 年份：2020
The Mg acceptor activation mechanism and hole transport characteristics in AlGaN alloy with Mg doping concen-tration (～1020 cm-3) grown by metal-organic chemical...
[期刊论文] 作者：Peng-Fei Shao,Gen-Jun Shi,Yao-Zheng Wu,Zheng-Peng Wang,Si-Qi Li,Dong-Qi Zhang,Tao Tao,Qing-Jun Xu,Zi-Li Xie,
来源：中国物理B（英文版） 年份：2022
A systematic investigation on PA-MBE grown GaN with low growth rates (less than 0.2 μm/h) has been conducted in a wide growth temperature range,in order to guide future growth of sophisticated fine structures for quantum device application......
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